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1

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

Khandelwal, Sourabh, Chauhan, Yogesh Singh, Fjeldly, Tor A.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 467 KB

english, 2012

2

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Khandelwal, Sourabh, Yadav, Chandan, Agnihotri, Shantanu, Chauhan, Yogesh Singh, Curutchet, Arnaud, Zimmer, Thomas, De Jaeger, Jean-Claude, Defrance, Nicolas, Fjeldly, Tor A.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 910 KB

english, 2013

3

[IEEE 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST) - Mumbai, India (2009.06.1-2009.06.2)] 2009 2nd International Workshop on Electron Devices and Semiconductor Technology - Modeling of quantum mechanical effects in ultra-thin body nanoscale double-gate FinFET

Monga, Udit, Fjeldly, Tor A., Vishvakarma, Santosh K.

Year:

2009

Language:

english

File:

PDF, 539 KB

english, 2009

4

Interaction between electronic and vibronic Raman scattering in heavily doped silicon

Fernando Cerdeira, Tor A. Fjeldly, Manuel Cardona

Journal:

Solid State Communications

Year:

1973

Language:

english

File:

PDF, 281 KB

english, 1973

5

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - A physics based compact model for drain current in AlGaN/GaN HEMT devices

Khandelwal, Sourabh, Fjeldly, Tor A.

Year:

2012

Language:

english

File:

PDF, 923 KB

english, 2012

6

A charge-based capacitance model for AlGaAs/GaAs HEMTs

Khandelwal, Sourabh, Yigletu, F.M., Iñiguez, B., Fjeldly, Tor A.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 304 KB

english, 2013

7

Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability

Monga, Udit, Aghassi, Jasmin, Siprak, Domagoj, Sedlmeir, Josef, Hanke, Christian, Kubrak, Volker, Heinrich, Roland, Fjeldly, Tor A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 378 KB

english, 2011

8

Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

Goyal, Nitin, Fjeldly, Tor A.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 268 KB

english, 2014

9

Lab on the Web (Running Real Electronics Experiments via the Internet) || Remote Laboratory for Electrical Experiments

Fjeldly, Tor A., Shur, Michael S.

Year:

2003

Language:

english

File:

PDF, 1.25 MB

english, 2003

10

ASM GaN: Industry Standard Model for GaN RF and Power Devices--Part 1: DC, CV, and RF Model

Khandelwal, Sourabh, Chauhan, Yogesh Singh, Fjeldly, Tor A., Ghosh, Sudip, Pampori, Ahtisham, Mahajan, Dhawal, Dangi, Raghvendra, Ahsan, Sheikh Aamir

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.87 MB

english, 2018

11

Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation

Yuhua Cheng, Tor A Fjeldly

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 886 KB

english, 1996

12

Capacitance modeling of short-channel double-gate MOSFETs

Håkon Børli, Sigbjørn Kolberg, Tor A. Fjeldly

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 864 KB

english, 2008

13

Tuning of resist slope with hard-baking parameters and release methods of extra hard photoresist for RF MEMS switches

Shimul Chandra Saha, Håkon Sagberg, Erik Poppe, Geir Uri Jensen, Tor A. Fjeldly, Trond Sæther

Journal:

Sensors and Actuators A: Physical

Year:

2008

Language:

english

File:

PDF, 1.59 MB

english, 2008

14

Spark Plasma Sintering and Hot Pressing of Hetero-Doped LaNbO4

Guttorm E. Syvertsen, Claude Estournès, Harald Fjeld, Reidar Haugsrud, Mari-Ann Einarsrud, Tor Grande

Journal:

Journal of the American Ceramic Society

Year:

2012

Language:

english

File:

PDF, 1.48 MB

english, 2012

15

Device Modeling for Analog and RF CMOS Circuit Design Volume 29 (Ytterdal/Device) || Effects and Modeling of Process Variation and Device Mismatch

Ytterdal, Trond, Cheng, Yuhua, Fjeldly, Tor A.

Year:

2003

Language:

english

File:

PDF, 164 KB

english, 2003

16

Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs

Khandelwal, Sourabh, Sharma, Surya, Chauhan, Yogesh Singh, Gneiting, Thomas, Fjeldly, Tor A.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 320 KB

english, 2013

17

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

Goyal, Nitin, Iñiguez, Benjamin, Fjeldly, Tor A.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 528 KB

english, 2012

18

[IEEE 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - Playa del Carmen, Mexico (2012.03.14-2012.03.17)] 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) - A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

Khandelwal, Sourabh, Fjeldly, Tor A.

Year:

2012

Language:

english

File:

PDF, 264 KB

english, 2012

19

Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

Goyal, Nitin, Fjeldly, Tor A.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 763 KB

english, 2013

20

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs

Khandelwal, Sourabh, Fjeldly, Tor A.

Year:

2012

Language:

english

File:

PDF, 703 KB

english, 2012

21

Device Modeling for Analog and RF CMOS Circuit Design (Ytterdal/Device) || MOSFET Device Physics and Operation

Ytterdal, Trond, Cheng, Yuhua, Fjeldly, Tor A.

Year:

2003

Language:

english

File:

PDF, 379 KB

english, 2003

22

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Unified analytical modeling of GAA nanoscale MOSFETs

Vishvakarma, Santosh K., Monga, Udit, Fjeldly, Tor A.

Year:

2010

Language:

english

File:

PDF, 492 KB

english, 2010

23

Self-consistent theory including nonstationary phenomena for carrier transport in the AlGaAs/GaAs high electron mobility transistor

Fjeldly, Tor A., Johnsen, Lars

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 1.01 MB

english, 1988

24

-type Si. I. Acoustical Modes

Fjeldly, Tor A., Cerdeira, Fernando, Cardona, Manuel

Journal:

Physical Review B

Year:

1973

Language:

english

File:

PDF, 708 KB

english, 1973

25

[Selected Topics in Electronics and Systems] Advances In Surface Acoustic Wave Technology, Systems And Applications Volume 19 (Volume 1) || LADDER TYPE SAW FILTER AND ITS APPLICATION TO HIGH POWER SAW DEVICES

Ruppel, Clemens C W, Fjeldly, Tor A

Year:

2000

Language:

english

File:

PDF, 2.08 MB

english, 2000

26

SIMULATION AND MODELING OF COMPOUND SEMICONDUCTOR DEVICES

FJELDLY, TOR A., SHUR, MICHAEL S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

1995

Language:

english

File:

PDF, 2.10 MB

english, 1995

27

[Selected Topics in Electronics and Systems] CMOS RF Modeling, Characterization and Applications Volume 24 || SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

Deen, M Jamal, Fjeldly, Tor A

Year:

2002

Language:

english

File:

PDF, 4.84 MB

english, 2002

28

[Offshore Technology Conference Offshore Technology Conference - Houston, Texas (1995-05-01)] Offshore Technology Conference - Floating Production Systems

Moksnes, Jan, Naess, Tor, Eriksen, Knut, Fjeld, Svein

Language:

english

File:

PDF, 1.45 MB

english

29

Monte Carlo simulation of semiconductor devices

Geir U. Jensen, Bjørnar Lund, Tor A. Fjeldly, Michael Shur

Journal:

Computer Physics Communications

Year:

1991

Language:

english

File:

PDF, 6.04 MB

english, 1991

30

Elastic constants and Raman frequencies of heavily doped Si under uniaxial stress

Tor A. Fjeldly, Fernando Cerdeira, Manuel Cardona

Journal:

Solid State Communications

Year:

1973

Language:

english

File:

PDF, 324 KB

english, 1973

31

HPLC analysis of salt tolerant mixtures of ethoxylated and non-ethoxylated sulfonates applicable in enhanced oil recovery

Ingebret Fjelde, Tor Austad

Journal:

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Year:

1994

Language:

english

File:

PDF, 493 KB

english, 1994

32

Chemical stability of ethoxylated sulfonate oligomers related to improved oil recovery

Tor Austad, Ingebret Fjelde

Journal:

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Year:

1993

Language:

english

File:

PDF, 410 KB

english, 1993

33

Preface

Yiming Li, Juncheng Cao, Pavel Dyshlovenko, Tatsuya Ezaki, Tor A. Fjeldly, Hans Kosina, Todd McKenzie, Hiroshi Mizuta, Laurence T. Yang

Journal:

Mathematics and Computers in Simulation

Year:

2008

Language:

english

File:

PDF, 58 KB

english, 2008

34

Preface

Yiming Li, Pavel Dyshlovenko, Tatsuya Ezaki, Tor A. Fjeldly, Hans Kosina, Todd McKenzie, Mincheol Shin, Laurence T. Yang, Shao-Ming Yu

Journal:

Mathematical and Computer Modelling

Year:

2010

Language:

english

File:

PDF, 151 KB

english, 2010

35

Analysis of the anomalous drain current characteristics of halo MOSFETs

Hoewoo Koo, Kieyoung Lee, Kyungho Lee, Tor A Fjeldly, Michael S Shur

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 833 KB

english, 2003

36

Unified substrate current model for MOSFETs

Benjamín Iñíguez, Tor A. Fjeldly

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 657 KB

english, 1997

37

Unified model for short-channel poly-Si TFTs

Benjamı́n Iñiguez, Zheng Xu, Tor A. Fjeldly, Michael S. Shur

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 218 KB

english, 1999

38

Chemical flooding of oil reservoirs Part 9. Dynamic adsorption of surfactant onto sandstone cores from injection water with and without polymer present

Tor Austad, Steinar Ekrann, Ingebret Fjelde, Knut Taugbøl

Journal:

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Year:

1997

Language:

english

File:

PDF, 1.00 MB

english, 1997

39

2D Modeling of nanoscale DG SOI MOSFETs in and near the subthreshold regime

Sigbjørn Kolberg, Tor A. Fjeldly

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 397 KB

english, 2006

40

Device Modeling for Analog and RF CMOS Circuit Design Volume 29 (Ytterdal/Device) || Bipolar Transistors in CMOS Technologies

Ytterdal, Trond, Cheng, Yuhua, Fjeldly, Tor A.

Year:

2003

Language:

english

File:

PDF, 71 KB

english, 2003

41

Noradrenaline Evokes an α-Adrenoceptor-mediated Inotropic Effect in Human Ventricular Myocardium

Halfdan Aass, Tor Skomedal, Jan-Bjørn Osnes, Nils Bjørn Fjeld, Gudmund Klingen, Asbjøm Langslet, Jan Svennevig, Gudmund Semb

Journal:

Basic & Clinical Pharmacology & Toxicology

Year:

1986

Language:

english

File:

PDF, 208 KB

english, 1986

42

Modeling of coupling mechanisms and frequency separation in double disk resonators

Christopher Grinde, Tor A. Fjeldly

Journal:

Applied Mathematical Modelling

Year:

2012

Language:

english

File:

PDF, 669 KB

english, 2012

43

A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Khandelwal, Sourabh, Goyal, Nitin, Fjeldly, Tor A.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 515 KB

english, 2013

44

Monte Carlo simulation of electron transport in mercury cadmium telluride

Gelmont, Boris, Lund, Bjornar, Kim, Ki-Sang, Jensen, Geir U., Shur, Michael, Fjeldly, Tor A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 932 KB

english, 1992

45

Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs

Khandelwal, Sourabh, Fjeldly, Tor A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

46

Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques

Monga, Udit, Nilsen, Dag-Martin, Fjeldly, Tor A.

Journal:

Microelectronics Journal

Year:

2013

Language:

english

File:

PDF, 271 KB

english, 2013

47

[Selected Topics in Electronics and Systems] Advances in Surface Acoustic Wave Technology, Systems and Applications Volume 20 (Volume 2) || FRONT MATTER

Ruppel, Clemens C W, Fjeldly, Tor A

Year:

2001

Language:

english

File:

PDF, 420 KB

english, 2001

48

[Selected Topics in Electronics and Systems] Frontiers in Electronics Volume 54 (Advanced Modeling of Nanoscale Electron Devices) || FRONT MATTER

Iñiguez, Benjamin, Fjeldly, Tor A

Year:

2014

Language:

english

File:

PDF, 242 KB

english, 2014

49

Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

Yigletu, Fetene Mulugeta, Khandelwal, Sourabh, Fjeldly, Tor A., Iniguez, Benjamin

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 841 KB

english, 2013

50

Chronic Lateral Instability of the Ankle: Method of Reconstruction Using the Achilles Tendon

Solheim, Ludvig Fjeld, Denstad, Tor Finn, Roaas, Asbjørn

Journal:

Acta Orthopaedica

Year:

1980

Language:

english

File:

PDF, 287 KB

english, 1980

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